0405-1000m rev c microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408-986-8031 fax 408-869-2324 . general description the 0405-1000m is an internally matched, common emitter transistor capable of providing 1000 watts of pulsed rf output power in a push-pull configuration at three hundreds microsecond pulse width ten percent duty factor across the frequency band 400-450 mhz. this hermetically sealed transistor is specifically designed for medium pulse radar applications. it utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. case outline 55sl, style 2 absolute maximum ratings maximum power dissipation @ 25 o c 1 1400 watts maximum voltage and current bvces collector to emitter voltage 85 volts bvebo emitter to base voltage 3.5 volts ic collector current 70 amps maximum temperatures storage temperature - 65 to + 200 o c operating junction temperature + 200 o c electrical characteristics @ 25 o c symbol characteristics test conditions min typ max units pout pin pg ? c pd vswr 1 power out (note 2) pulsed power input, pulsed power gain collector efficiency pulse amplitude droop load mismatch tolerance f = 400, 425,450 mhz vcc = 40 volts, pulse width = 300 s duty = 10 % as above f = 425mhz, po =1000w 1000 9.5 45 10 112 0.7 2:1 watts watts db % db functional characteristics @ 25 o c bvces ices iebo hfe ? jc 1 collector to emitter breakdown collector to emitter leakage emitter to base leakage current dc current gain thermal resistance ic = 50 ma vce = 50 volts veb = 3.0 volts vce = 5 v, ic = 1000ma rated pulse condition 75 10 30 25 0.08 volts ma ma o c/w issue nov. 2006 note 1: pulse width = 300 us, duty = 10% note 2: power input = 112 watts max peak pulsed note 3: this part is tested at fixed pout=1000w. 0405-1000m 1000 watts - 40 volts, 300 s, 10% uhf pulsed radar 400 - 450 mhz downloaded from: http:///
0405-1000m rev c microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408-986-8031 fax 408-869-2324 . 0405-1000m performance curves 0405-1000m pout vs. pin @300us10%40v 0 200 400 600 800 1000 1200 1400 0.0 20.0 40.0 60.0 80.0 100.0 120.0 input power (w) o utput pow er( w ) 400mhz 425mhz 450mhz 0405-1000m efficiency vs. pin @300us10%40v 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 0.0 20.0 40.0 60.0 80.0 100.0 120.0 input power(w) e fficienc y 400mhz 425mhz 450mhz 0405-1000m band width@300us10%40v 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5 12 400 405 410 415 420 425 430 435 440 445 450 frequency(mhz) pout ( w) pin=95w single-ended impedance information single-ended impedance freq zs zl 400 1.39-j2.9 0.79-j2.41 425 1.94-j2.93 0.86-j2.55 450 2.21-j3.07 0.91-j2.95 downloaded from: http:///
0405-1000m rev c microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408-986-8031 fax 408-869-2324 0405-1000m broadband test fixture board material arlon 2.55 31 mil trl measurement downloaded from: http:///
0405-1000m rev c microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408-986-8031 fax 408-869-2324 0405-1000m case outline downloaded from: http:///
|
